?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH40N60SMD rev. c0 FGH40N60SMD 600 v, 40 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i cm (1) pulsed collector current @ t c = 25 o c120 a i f diode forward current @ t c = 25 o c40 a diode forward current @ t c = 100 o c20 a i fm (1) pulsed diode maximum forward current 120 a p d maximum power dissipation @ t c = 25 o c349 w maximum power dissipation @ t c = 100 o c174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c g e c e c g collector (flange) FGH40N60SMD 600 v, 40 a field stop igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.9v(typ.) @ i c = 40 a ? high input impedance ? fast switching: e off = 6.5 uj/a ? tighten parameter distribution ?rohs compliant applications ? solar inverter, ups, welder, pfc, telecom, ess general description using novel field stop igbt technology, fairchild ? ?s new series of field stop 2 nd generation igbts offer the optimum perfor- mance for solar inverter, ups, welder, telecom, ess and pfc applications where low conduction and switching losses are essential.
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH40N60SMD rev. c0 thermal characteristics package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.43 o c / w r ? jc (diode) thermal resistance, junction to case - 1.5 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w device marking device package re el size tape width quantity FGH40N60SMD FGH40N60SMD to-247 - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v ? bv ces ????? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 3.5 4.5 6.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -1.92.5v i c = 40a , v ge = 15v, t c = 175 o c -2.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1880 - pf c oes output capacitance - 180 - pf c res reverse transfer capacitance - 50 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 ? , v ge = 15v, inductive load, t c = 25 o c -1216ns t r rise time - 20 28 ns t d(off) turn-off delay time - 92 120 ns t f fall time - 13 17 ns e on turn-on switching loss - 0.87 1.30 mj e off turn-off switching loss - 0.26 0.34 mj e ts total switching loss - 1.13 1.64 mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 ? , v ge = 15v, inductive load, t c = 175 o c -15- ns t r rise time - 22 - ns t d(off) turn-off delay time - 116 - ns t f fall time - 16 - ns e on turn-on switching loss - 0.97 - mj e off turn-off switching loss - 0.60 - mj e ts total switching loss - 1.57 - mj
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH40N60SMD rev. c0 electrical characteristi cs of the igbt (continued) electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400v, i c = 40a, v ge = 15v - 119 180 nc q ge gate to emitter charge - 13 20 nc q gc gate to collector charge - 58 90 nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c- 2.3 2.8 v t c = 175 o c - 1.67 - e rec reverse recovery energy i f =20a, di f /dt = 200a/ ? s t c = 175 o c - 48.9 - uj t rr diode reverse recovery time t c = 25 o c- 36 - ns t c = 175 o c- 110 - q rr diode reverse recovery charge t c = 25 o c - 46.8 - nc t c = 175 o c - 445 -
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH40N60SMD rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0246 0 20 40 60 80 100 120 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 20 40 60 80 100 120 v ge = 8v 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 30 60 90 120 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH40N60SMD rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resistance 4 8 12 16 20 0 4 8 12 16 20 80a i c = 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 40 80 120 0 3 6 9 12 15 400v common emitter t c = 25 o c 300v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 300 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ]
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH40N60SMD rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistanc e figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 1020304050 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [ a ] 0 1020304050 0.1 1 5 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance , r g [ ? ] 20 30 40 50 60 70 80 0.1 1 6 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 1 10 100 200 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH40N60SMD rev. c0 typical performance characteristics figure 19. current derating figure 20. lo ad current vs. frequency figure 21. forward characteristics figure 22. reverse current figure 23. stored charge figure 24. reverse recovery time 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 common emitter v ge = 15v collector current, i c [a] collector-emittercase temperature, t c [ o c] 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 110 120 tc = 75 o c square wave t j < 175 o c, d = 0.5, v ce = 400 v v ge = 15/0 v, r g = 6 ? collector current, i c [a] switching frequency, f [hz] tc = 100 o c 0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 t c = 25 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] t c = 25 o c t c = 175 o c 0 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 100 1000 t c = 25 o c t c = 175 o c t c = 100 o c reverse currnet, i ces [ ? a] v r [v] 0 5 10 15 20 25 30 35 40 45 0 100 200 300 400 500 600 700 t c = 25 o c t c = 175 o c di/dt = 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forwad current, i f [a] 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 t c = 25 o c t c = 175 o c di/dt = 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a]
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH40N60SMD rev. c0 typical performance characteristics figure 25.transient thermal impedance of igbt figure 26.t ransient thermal impedance of diode 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 1 3 0.05 0.01 0.02 0.1 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH40N60SMD rev. c0 mechanical dimensions to-247a03
FGH40N60SMD 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 10 www.fairchildsemi.com FGH40N60SMD rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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